SI5999EDU-T1-GE3

Specifications

Type Of Transistor

P-MOSFET

Terminal Formu

C BEND

Drainsource On Resistancemax

0.059 Ω

Qualification Status

Not Qualified

Kind Of Channel

enhanced

Transistor Element Material

SILICON

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Mounting

THT

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

20 A

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Gross Weight

2 g

Drain Currentmax Id

6 A

Package Body Material

PLASTIC/EPOXY

Package Description

HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, CHIPFET-8

Terminal Kaplaması

MATTE TIN

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Number Of Terminals

6

Ds Breakdown Voltagemin

20 V

Case Connection

DRAIN

Jesd30 Code

R-PDSO-C6

Exterior Housing Material

2

Terminal Pozisyonu

DUAL

Saturation Current

1

Polaritychannel Type

N-CHANNEL

REACH Uyumluluk Kodu

compliant

Power Dissipationmax Abs

10.4 W

Transistor Application

SWITCHING

Polarisation

unipolar

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE