SI5515CDC-T1-GE3

Specifications

Terminal Pozisyonu

DUAL

Exterior Housing Material

2

Uzunluk

100000 mm

Jesd30 Code

R-PDSO-C8

Saturation Current

1

Ambalaj

reel 100 m

Power Dissipationmax Abs

3.1 W

REACH Uyumluluk Kodu

compliant

Transistor Application

SWITCHING

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Nominal Diameter

4.8 mm

Transport Packaging Sizequantity

46*46*58/9

Shrinkage Ratio

3 : 1

Diameter Before Shrinkage

4.8 mm

Drainsource On Resistancemax

0.036 Ω

Terminal Formu

C BEND

Material

polyolefin

Fet Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Kodu

e3

Renk

green

Transistor Element Material

SILICON

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Maximum Working Voltage

1500 V

Operating Temperature Range

-55…+125 °C

Part Life Cycle Code

Active

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Diameter After Shrinkage

1.6 mm

Yüzey Montaj

YES

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

20 V

Tip

Heat shrink tube with adhesive layer

Terminal Kaplaması

MATTE TIN

Wall Thickness Before Shrinkage

0.48 mm

Number Of Terminals

8

ECCN Kodu

EAR99

Shrinkage Temperature

100 °C

Operating Temperaturemax

150 °C