SI5433BDC-T1-E3

Specifications

Capacitance Tolerance

±0.25pF

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Type Of Capacitor

ceramic

Renk

black

JESD-609 Kodu

e3

Capacitors Series

GCQ

Part Life Cycle Code

Obsolete

Shrink Ratio

2:1

Yüzey Montaj

YES

Dielektrik

C0G (NP0)

Mounting

SMD

Operating Mode

ENHANCEMENT MODE

Number Of Terminals

8

ECCN Kodu

EAR99

Terminal Kaplaması

MATTE TIN

Ds Breakdown Voltagemin

20 V

Drain Currentmax Id

4.8 A

Package Description

LEAD FREE, 1206-8, CHIPFET-8

Exterior Housing Material

1

Jesd30 Code

R-XDSO-C8

Operating Voltage

50V

Saturation Current

1

Polaritychannel Type

P-CHANNEL

Wall Thickness After Shrink

1.25 ±0.15 mm

Kapasitans

7pF

Package Shape

RECTANGULAR

Transport Packaging Sizequantity

105*26*26/100

Drainsource On Resistancemax

0.037 Ω

Qualification Status

Not Qualified

Shrink Temperature

+70...+110 °C

Inner Diameter Before Shrink

50 mm

Inner Diameter After Shrink

25 mm

Terminal Formu

C BEND

Material

polyolefin

Transistor Element Material

SILICON

Operating Temperature Range

-55...+105 °C

Gross Weight

159.50

Configuration

SINGLE WITH BUILT-IN DIODE

Rohs Code

Yes