SI4866DY-T1-E3

Specifications

Operating Temperaturemin

-55 °C

Drainsource On Resistancemax

0.0055 Ω

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

11 A

Saturation Current

1

Configuration

SINGLE WITH BUILT-IN DIODE

Exterior Housing Material

1

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

3 W

Part Life Cycle Code

End Of Life

Rohs Code

Yes

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

12 V

Operating Temperaturemax

150 °C

Terminal Kaplaması

Matte Tin (Sn)

Polaritychannel Type

N-CHANNEL