SI4864DY-T1-GE3

Specifications

Ds Breakdown Voltagemin

20 V

Operating Temperaturemax

150 °C

Number Of Terminals

8

Polaritychannel Type

N-CHANNEL

Saturation Current

1

Configuration

SINGLE WITH BUILT-IN DIODE

Package Description

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

3.5 W

Package Shape

RECTANGULAR

Tepe Reflow Süresi (maks. sn)

30

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

17 A

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Terminal Kaplaması

MATTE TIN

Exterior Housing Material

1

Part Life Cycle Code

End Of Life

Rohs Code

Yes

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drainsource On Resistancemax

0.0035 Ω

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99