SI4848DY-T1-GE3

Specifications

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Transport Packaging Sizequantity

60*18*12/1000

Drain Currentmax Id

2.7 A

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

Terminal Formu

GULL WING

Number Of Terminals

8

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

150 V

Power Dissipationmax Abs

3 W

Lead Length

14 mm

Package Shape

RECTANGULAR

Maximum Voltage

220 VAC or 24 VDC

Saturation Current

1

Switching Scheme

normally open (NO)

Package Description

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Configuration

SINGLE WITH BUILT-IN DIODE

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Genişlik

10.2 mm

Trip Temperature

90±5

Yüzey Montaj

YES

Weight

2.62

Insulation Resistance

≥100 MOhm

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

case 15.6 mm, leads 14 mm

Drainsource On Resistancemax

0.085 Ω

Terminal Kaplaması

Matte Tin (Sn) - annealed

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Noal Current

2.5 Amin

Part Life Cycle Code

Not Recommended

Rohs Code

Yes

Transistor Element Material

SILICON