SI4800BDY-T1-E3

Specifications

Ds Breakdown Voltagemin

30 V

Turnon Timemax Ton

35 ns

Number Of Terminals

8

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Saturation Current

1

Package Description

MS-012, SOIC-8

Configuration

SINGLE WITH BUILT-IN DIODE

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

6.5 W

Pulsed Drain Currentmax Idm

40 A

Package Shape

RECTANGULAR

Avalanche Energy Rating Eas

11.25 mJ

Tepe Reflow Süresi (maks. sn)

30

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Drain Currentmax Id

6.5 A

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

compliant

Package Body Material

PLASTIC/EPOXY

Terminal Kaplaması

MATTE TIN

Exterior Housing Material

1

Reference Standard

IEC-61249-2-21

Part Life Cycle Code

Not Recommended

Rohs Code

Yes

Transistor Element Material

SILICON

Jedec95 Code

MS-012AA

Yüzey Montaj

YES

Operating Temperaturemin

-55 °C

Drainsource On Resistancemax

0.0185 Ω

Turnoff Timemax Toff

75 ns

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260