SI4559ADY-T1-GE3

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.058 Ω

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

60 V

Qualification Status

Not Qualified

Package Description

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Drain Currentmax Id

4.3 A

Rohs Code

Yes

Jesd30 Code

R-PDSO-G8

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

3.4 W

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

compliant

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

YES

Avalanche Energy Rating Eas

6.1 mJ

Package Shape

RECTANGULAR

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Saturation Current

1

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Tepe Reflow Süresi (maks. sn)

30

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Exterior Housing Material

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Terminals

8

Package Style

SMALL OUTLINE

Terminal Kaplaması

Matte Tin (Sn)

Pulsed Drain Currentmax Idm

20 A

Part Life Cycle Code

Active

Terminal Formu

GULL WING