SI4447DY-T1-GE3

Specifications

Package Style

SMALL OUTLINE

Number Of Terminals

8

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Part Life Cycle Code

End Of Life

Terminal Kaplaması

Matte Tin (Sn)

Pulsed Drain Currentmax Idm

30 A

Tepe Reflow Süresi (maks. sn)

30

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Exterior Housing Material

1

ECCN Kodu

EAR99

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

compliant

Saturation Current

1

Terminal Pozisyonu

DUAL

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Avalanche Energy Rating Eas

13 mJ

Drain Currentmax Id

3.3 A

Package Description

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.054 Ω

Ds Breakdown Voltagemin

40 V

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Power Dissipationmax Abs

2 W

Operating Temperaturemax

150 °C

Jesd30 Code

R-PDSO-G8

Rohs Code

Yes