SI4178DY-T1-GE3

Specifications

Rohs Code

Yes

Jesd30 Code

R-PDSO-G8

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

5 W

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.021 Ω

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30 V

Turnoff Timemax Toff

35 ns

Package Description

SOP-8

Drain Currentmax Id

12 A

Avalanche Energy Rating Eas

5 mJ

Package Shape

RECTANGULAR

Feedback Capmax Crss

56 pF

Terminal Pozisyonu

DUAL

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Transistor Application

SWITCHING

Saturation Current

1

Fabrika Tedarik Süresi

113 Weeks, 5 Days

REACH Uyumluluk Kodu

compliant

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

YES

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Exterior Housing Material

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jedec95 Code

MS-012AA

Reference Standard

IEC-61249-2-21

Polaritychannel Type

N-CHANNEL

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

40 A

Terminal Kaplaması

Matte Tin (Sn)

Part Life Cycle Code

Active

Terminal Formu

GULL WING

Turnon Timemax Ton

55 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Terminals

8

Package Style

SMALL OUTLINE

Operating Temperaturemin

-55 °C