SI4160DY-T1-GE3

Specifications

Package Style

SMALL OUTLINE

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Terminals

8

Terminal Formu

GULL WING

Terminal Kaplaması

Matte Tin (Sn)

Part Life Cycle Code

Active

Tepe Reflow Süresi (maks. sn)

30

Jedec95 Code

MS-012AA

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Exterior Housing Material

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Yüzey Montaj

YES

REACH Uyumluluk Kodu

not_compliant

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Saturation Current

1

Package Shape

RECTANGULAR

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Drain Currentmax Id

25.4 A

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.0049 Ω

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30 V

Power Dissipationmax Abs

5.7 W

JESD-609 Kodu

e3

Rohs Code

Yes

Jesd30 Code

R-PDSO-G8

Operating Temperaturemax

150 °C