SI3493DDV-T1-GE3

Specifications

Transistor Element Material

SILICON

Gross Weight

1160 g

Configuration

SINGLE WITH BUILT-IN DIODE

Date Of Intro

2017-03-22

Polaritychannel Type

P-CHANNEL

Fabrika Tedarik Süresi

16 Weeks, 4 Days

Number Of Terminals

6

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

20 V

Drain Currentmax Id

8 A

Terminal Formu

GULL WING

Yüzey Montaj

YES

Internal Height

35mm

External Width

76.5mm

Version

frames openable from inner radius

Bending Radius

75mm

Exterior Housing Material

1

Drainsource On Resistancemax

0.024 Ω

REACH Uyumluluk Kodu

compliant

Package Style

SMALL OUTLINE

Jesd30 Code

R-PDSO-G6

External Height

50mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Description

TSOP-6

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Internal Width

60mm

Package Body Material

PLASTIC/EPOXY

Uzunluk

1040mm

Rohs Code

Yes

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Type Of Cable Accessories

cable chain

Part Life Cycle Code

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED