SI3493BDV-T1-GE3

Specifications

Akım Değeri

2A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

2.97 W

Connector

socket

Jesd30 Code

R-PDSO-G6

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Connector Pinout Layout

1x24

Contact Plating

gold-plated

Package Description

HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Çalışma Sıcaklığı

-40...163°C

Package Shape

RECTANGULAR

Spatial Orientation

straight

Profile

beryllium copper

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Part Life Cycle Code

Not Recommended

Transistor Application

SWITCHING

Flammability Rating

UL94V-0

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

Qualification Status

Not Qualified

Polaritychannel Type

P-CHANNEL

Pin Sayısı

24

Configuration

SINGLE WITH BUILT-IN DIODE

Gross Weight

2.43 g

Transistor Element Material

SILICON

Contacts Pitch

2.54mm

Plating Thickness

0.75µm

Yüzey Montaj

YES

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

20 V

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

8 A

Operating Temperaturemax

150 °C