SI3473DV-T1-E3

Specifications

Exterior Housing Material

1

Operating Temperaturemin

-55 °C

Drainsource On Resistancemax

0.023 Ω

REACH Uyumluluk Kodu

compliant

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Polaritychannel Type

P-CHANNEL

Qualification Status

Not Qualified

Operating Temperaturemax

150 °C

Number Of Terminals

6

Drain Currentmax Id

5.9 A

Ds Breakdown Voltagemin

12 V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Yüzey Montaj

YES

Package Shape

RECTANGULAR

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

40

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Part Life Cycle Code

Obsolete

Tepe Reflow Sıcaklığı (°C)

260

Saturation Current

1

Package Style

SMALL OUTLINE

Jesd30 Code

R-PDSO-G6

Power Dissipationmax Abs

2 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Description

LEAD FREE, TSOP-6

Package Body Material

PLASTIC/EPOXY