SI3443CDV-T1-GE3

Specifications

Power Dissipationmax Abs

3.2 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Style

SMALL OUTLINE

Jesd30 Code

R-PDSO-G6

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Description

HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Terminal Kaplaması

Pure Matte Tin (Sn)

ECCN Kodu

EAR99

Rohs Code

Yes

Package Shape

RECTANGULAR

Part Life Cycle Code

Not Recommended

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

Polaritychannel Type

P-CHANNEL

Fabrika Tedarik Süresi

17 Weeks, 3 Days

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Yüzey Montaj

YES

Number Of Terminals

6

Operating Temperaturemax

150 °C

Ds Breakdown Voltagemin

20 V

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

5.97 A

Drainsource On Resistancemax

0.06 Ω

REACH Uyumluluk Kodu

compliant

Exterior Housing Material

1