SI3417DV-T1-GE3

Specifications

Ambalaj

supplied in packs in multiples of 1.0 m

Material

polyolefin

Number Of Terminals

6

Operating Temperature Range

-55…+125 °C

Drain Currentmax Id

8 A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30 V

Transport Packaging Sizequantity

102*20*20/20

Terminal Formu

GULL WING

Yüzey Montaj

YES

Transistor Element Material

SILICON

Gross Weight

645.00

Configuration

SINGLE WITH BUILT-IN DIODE

Polaritychannel Type

P-CHANNEL

Fabrika Tedarik Süresi

18 Weeks

Exterior Housing Material

1

Renk

black

Drainsource On Resistancemax

0.0252 Ω

Shrinkage Temperature

100 °C

REACH Uyumluluk Kodu

compliant

Diameter Before Shrinkage

120 mm

Package Description

MO-193C, TSOP-6

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PDSO-G6

Package Style

SMALL OUTLINE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jedec95 Code

MO-193AA

Diameter After Shrinkage

40 mm

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Tip

Heat shrinkable tube with adhesive layer

Part Life Cycle Code

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Saturation Current

1

Uzunluk

1000 mm

Shrinkage Ratio

3 : 1

Package Shape

RECTANGULAR