SI2392ADS-T1-GE3

Specifications

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Kaplaması

Matte Tin (Sn)

Part Life Cycle Code

Active

Drain Currentmax Id

3.1 A

Gross Weight

1 g

Feedback Capmax Crss

14 pF

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Exterior Housing Material

1

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Type Of Transistor

N-MOSFET

REACH Uyumluluk Kodu

compliant

Operating Temperaturemin

-55 °C

Operating Temperaturemax

150 °C

Package Style

SMALL OUTLINE

Saturation Current

1

Jesd30 Code

R-PDSO-G3

Kind Of Channel

enhanced

Rohs Code

Yes

Package Body Material

PLASTIC/EPOXY

Fabrika Tedarik Süresi

28 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.126 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Package Description

TO-236, SOT-23, 3 PIN

Jedec95 Code

TO-236AB

Polarisation

unipolar

Yüzey Montaj

YES

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

2.5 W

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

100 V

Mounting

SMD

Number Of Terminals

3