SI2323DS-T1-GE3

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Package Body Material

PLASTIC/EPOXY

Fabrika Tedarik Süresi

13 Weeks

Jesd30 Code

R-PDSO-G3

Rohs Code

Yes

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.039 Ω

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

Saturation Current

1

Package Style

SMALL OUTLINE

Operating Temperaturemin

-55 °C

Operating Temperaturemax

150 °C

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

20 V

Number Of Terminals

3

Yüzey Montaj

YES

Polaritychannel Type

P-CHANNEL

Jedec95 Code

TO-236AB

Package Description

TO-236, SOT-23, 3 PIN

Tepe Reflow Sıcaklığı (°C)

260

Drain Currentmax Id

3.7 A

Feedback Capmax Crss

140 pF

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Part Life Cycle Code

Not Recommended

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Exterior Housing Material

1

ECCN Kodu

EAR99

Transistor Application

SWITCHING