SI2315BDS-T1-E3

Specifications

Transistor Element Material

SILICON

Rohs Code

Yes

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Control Voltage

4...32 (DC) V

Terminal Pozisyonu

DUAL

Package Style

SMALL OUTLINE

Saturation Current

1

Relative Humidity

35...85 %

Terminal Formu

GULL WING

Package Shape

RECTANGULAR

Depth

62 mm

Ds Breakdown Voltagemin

12 V

Package Description

TO-236, SOT-23, 3 PIN

Tepe Reflow Sıcaklığı (°C)

260

Tip

Single-phase solid state relay SSR series

Gross Weight

120.00

Drain Currentmax Id

3 A

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Dielectric Strength

2500 (50 Hz / 1 min.) V

Leakage Current

5 mA

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Body Material

PLASTIC/EPOXY

Insulation Resistance

≥100 (at Uisolation.dc=500V) MOhm

Jesd30 Code

R-PDSO-G3

Drainsource On Resistancemax

0.05 Ω

REACH Uyumluluk Kodu

compliant

Transport Packaging Sizequantity

37*31.5*20/50

Fuse

10x38 mm 10A

Operating Temperaturemax

150 °C

Operating Temperaturemin

-55 °C

Number Of Terminals

3

Yüzey Montaj

YES

Polaritychannel Type

P-CHANNEL

Jedec95 Code

TO-236AB

Yükseklik

35 mm

Power Dissipationmax Abs

0.75 W

Genişlik

48 mm

Load Current

16 A