SI2303BDS-T1-E3

Specifications

Saturation Current

1

Package Style

SMALL OUTLINE

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

unknown

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.2 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G3

Rohs Code

Yes

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

0.9 W

Tepe Reflow Sıcaklığı (°C)

260

Jedec95 Code

TO-236

Polaritychannel Type

P-CHANNEL

Yüzey Montaj

YES

Package Description

ROHS COMPLIANT PACKAGE-3

Number Of Terminals

3

Ds Breakdown Voltagemin

30 V

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Part Life Cycle Code

Obsolete

Qualification Status

Not Qualified

Terminal Kaplaması

Matte Tin (Sn)

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Drain Currentmax Id

1.49 A

ECCN Kodu

EAR99

Exterior Housing Material

1

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30