SI1016CX-T1-GE3

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

0.22 W

Package Shape

RECTANGULAR

Number Of Terminals

6

Part Life Cycle Code

Active

Drain Currentmax Id

0.6 A

REACH Uyumluluk Kodu

compliant

Terminal Formu

FLAT

Ds Breakdown Voltagemin

20 V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package Style

SMALL OUTLINE

Exterior Housing Material

2

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

30

Yüzey Montaj

YES

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.396 Ω

Package Body Material

PLASTIC/EPOXY

Saturation Current

1

Jesd30 Code

R-PDSO-F6

Package Description

HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

Transistor Application

SWITCHING

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

Fabrika Tedarik Süresi

6 Weeks

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Polaritychannel Type

N-CHANNEL AND P-CHANNEL