IRFS11N50A

Specifications

Transistor Element Material

SILICON

Saturation Current

1

Power Dissipationmax Abs

170 W

Terminal Kaplaması

TIN LEAD

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

GULL WING

Exterior Housing Material

1

Number Of Terminals

2

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

unknown

Avalanche Energy Rating Eas

275 mJ

Package Body Material

PLASTIC/EPOXY

Part Life Cycle Code

Obsolete

Package Style

SMALL OUTLINE

Additional Feature

AVALANCHE RATED

Operating Temperaturemax

150 °C

Tepe Reflow Sıcaklığı (°C)

225

Pulsed Drain Currentmax Idm

44 A

Pin Sayısı

3

Drainsource On Resistancemax

0.52 Ω

Rohs Code

No

Qualification Status

Not Qualified

Package Shape

RECTANGULAR

Drain Currentmax Id

11 A

Yüzey Montaj

YES

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

500 V

Kurşunsuz Kodu

No

Package Description

SMALL OUTLINE, R-PSSO-G2

Operating Temperaturemin

-55 °C

JESD-609 Kodu

e0

Tepe Reflow Süresi (maks. sn)

30