IRFBE30PBF

Specifications

Terminal Pozisyonu

SINGLE

Power Dissipationmax Abs

125 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemax

150 °C

Case Connection

DRAIN

Additional Feature

AVALANCHE RATED

Fabrika Tedarik Süresi

17 Weeks, 4 Days

Number Of Terminals

3

Rohs Code

Yes

Pulsed Drain Currentmax Idm

16 A

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Package Shape

RECTANGULAR

Avalanche Energy Rating Eas

260 mJ

Drainsource On Resistancemax

3 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Package Style

FLANGE MOUNT

Part Life Cycle Code

Active

Kurşunsuz Kodu

Yes

Part Package Code

TO-220AB

Exterior Housing Material

1

Jesd30 Code

R-PSFM-T3

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Yüzey Montaj

NO

Drain Currentmax Id

4.1 A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Terminal Formu

THROUGH-HOLE

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

800 V

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Polaritychannel Type

N-CHANNEL

Jedec95 Code

TO-220AB