IRFB11N50APBF

Specifications

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.52 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

11 A

Power Dissipationmax Abs

170 W

Operating Temperaturemin

-55 °C

Fabrika Tedarik Süresi

16 Weeks, 5 Days

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Operating Temperaturemax

150 °C

Transistor Element Material

SILICON

Yüzey Montaj

NO

Part Package Code

TO-220AB

Avalanche Energy Rating Eas

275 mJ

Terminal Formu

THROUGH-HOLE

Part Life Cycle Code

Not Recommended

Terminal Kaplaması

Matte Tin (Sn)

Number Of Terminals

3

Package Style

FLANGE MOUNT

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PSFM-T3

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

44 A

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Kurşunsuz Kodu

Yes

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

500 V

Tepe Reflow Süresi (maks. sn)

30

Exterior Housing Material

1

Feedback Capmax Crss

8.1 pF