IRF830STRLPBF

Specifications

Transistor Element Material

SILICON

Mounting Hole Size

Ø43 mm

Fabrika Tedarik Süresi

12 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperature Range

-25…+55 °C

Genişlik

48 mm

Drainsource On Resistancemax

1.5 Ω

ECCN Kodu

EAR99

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

500 V

Transistor Application

SWITCHING

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

18 A

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Terminal Pozisyonu

SINGLE

Contacts

screw-clamp

Number Of Terminals

2

Saturation Current

1

Avalanche Energy Rating Eas

280 mJ

Yükseklik

48 mm

Case Connection

DRAIN

Centertocenter Distance

36 mm

Yüzey Montaj

YES

Maximum Voltage

690 V

Operating Temperaturemax

150 °C

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Rated Current

20 A

Power Dissipationmax Abs

74 W

Additional Feature

AVALANCHE RATED

Drain Currentmax Id

4.5 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Exterior Housing Material

1

Transport Packaging Sizequantity

51.5*40.5*33.5/150

Hole Diameter

3.5 mm

Kurşunsuz Kodu

Yes