IRF830PBF

Specifications

Avalanche Energy Rating Eas

280 mJ

Case Connection

DRAIN

Part Package Code

TO-220AB

Yüzey Montaj

NO

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

17 Weeks, 3 Days

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

75 W

Drain Currentmax Id

4.5 A

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Drainsource On Resistancemax

1.5 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Exterior Housing Material

1

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

500 V

Package Body Material

PLASTIC/EPOXY

Kurşunsuz Kodu

Yes

Qualification Status

Not Qualified

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

18 A

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSFM-T3

Rohs Code

Yes

REACH Uyumluluk Kodu

not_compliant

Package Style

FLANGE MOUNT

Number Of Terminals

3

Terminal Formu

THROUGH-HOLE

Part Life Cycle Code

Active

Terminal Kaplaması

MATTE TIN