IRF640PBF

Specifications

Pin Sayısı

3

Operating Temperaturemax

150 °C

Transistor Element Material

SILICON

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

125 W

Transistor Application

SWITCHING

Exterior Housing Material

1

Part Package Code

TO-220AB

Jedec95 Code

TO-220AB

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PSFM-T3

Package Body Material

PLASTIC/EPOXY

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

17 Weeks, 3 Days

Tepe Reflow Süresi (maks. sn)

30

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

580 mJ

Rohs Code

Yes

Terminal Formu

THROUGH-HOLE

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

JESD-609 Kodu

e3

HTS Kodu

8541.29.00.95

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Terminal Kaplaması

MATTE TIN

Yüzey Montaj

NO

Polaritychannel Type

N-CHANNEL

Kurşunsuz Kodu

Yes

Package Style

FLANGE MOUNT

Number Of Terminals

3

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

72 A

Package Description

ROHS COMPLIANT PACKAGE-3

Ds Breakdown Voltagemin

200 V

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Drain Currentmax Id

18 A

Drainsource On Resistancemax

0.18 Ω

Additional Feature

AVALANCHE RATED