2N7002E-T1-GE3

Specifications

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

0.35 W

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Yüzey Montaj

YES

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified

Saturation Current

1

Number Of Terminals

3

Exterior Housing Material

1

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G3

Operating Temperaturemax

150 °C

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-236AB

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

GULL WING

Drain Currentmax Id

0.24 A

Part Life Cycle Code

End Of Life

Package Style

SMALL OUTLINE

Package Description

HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Terminal Kaplaması

MATTE TIN

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Drainsource On Resistancemax

3 Ω

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

60 V