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C3 ChipZentronix

Vishay General Semiconductor - Diodes Division

VS-ENZ025C60N

IGBTs Modules

RoHS: Compliant

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Specifications

Vgs Th Gatesource Threshold Voltage
2.6 V
Pd Power Dissipation
104 W
Vgs Gatesource Voltage
- 20 V, + 20 V
Typical Turnon Delay Time
83 ns
Paket
Box
Tip
PressFit Power Module
Vds Drainsource Breakdown Voltage
600 V
Montaj Stili
Press Fit
Vr Reverse Voltage
600 V
Id Continuous Drain Current
26 A
Ürün Tipi
Discrete Semiconductor Modules
Typical Turnoff Delay Time
111 ns
Fabrika Paket Adedi
100
Rise Time
26 ns
Ürün Durumu
Active
RoHS
Details
Maks. Çalışma Sıcaklığı
+ 150 C
Seri
*
Transistor Polarity
N-Channel
Kılıf / Paket
EMIPAK
Ambalaj
Bulk
Configuration
1-Phase Bridge
Rds On Drainsource Resistance
71 mOhms

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