SQJQ936EL-T1_GE3

Specifications

Id Continuous Drain Current

100 A

Rds On Max Id Vgs

2.3mOhm @ 5A, 10V

Pd Power Dissipation

75 W

Kılıf / Paket

PowerPAK® 8 x 8 Dual

Seri

Automotive, AEC-Q101, TrenchFET®

Input Capacitance Ciss Max Vds

7300pF @ 25V

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Stili

SMD/SMT

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Drain To Source Voltage Vdss

40V

Temel Ürün No

SQJQ936

Configuration

2 N-Channel

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Gate Charge Qg Max Vgs

45nC @ 10V

Transistor Polarity

N-Channel

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Tedarikçi Cihaz Paketi

PowerPAK® 8 x 8 Dual

Power Max

75W (Tc)

Qg Gate Charge

98 nC

Vgs Th Gatesource Threshold Voltage

2.5 V

Current Continuous Drain Id25

100A (Tc)

Vgs Gatesource Voltage

- 20 V, + 20 V

Ürün Durumu

Active

Technology

MOSFET (Metal Oxide)

Montaj Tipi

Surface Mount

Number Of Channels

2 Channel

Vgsth Max Id

2.5V @ 250µA

Rds On Drainsource Resistance

2.3 mOhms

Vds Drainsource Breakdown Voltage

40 V