SIZF906ADT-T1-GE3

Specifications

Drainsource Voltage

30V

Kind Of Channel

enhanced

Type Of Transistor

N-MOSFET x2 + Schottky

Certificates

RoHS compliant

Onstate Resistance

5.3/1.58mΩ

Pulsed Drain Current

80...100A

Power Dissipation

38/83W

Gate Charge

49/200nC

Gross Weight

0.1g

Polarisation

unipolar

Kind Of Package

reel

Mounting

SMD

Drain Current

60A

Kind Of Package1

tape