SIHFL9110GE3

Specifications

Operating Junction Temperature C

-55 to 150

Channel Type

P

Typical Reverse Recovery Charge Nc

150

Maximum Diode Forward Voltage V

5.5

Channel Mode

Enhancement

Typical Rise Time Ns

27

Maximum Drain Source Voltage V

100

Typical Reverse Recovery Time Ns

80

Number Of Elements Per Chip

1

Typical Gate To Drain Charge Nc

4.1(Max)

Pcb Changed

3

Maximum Continuous Drain Current A

1.1

Configuration

Single Dual Drain

Package Width

3.7(Max)

Maximum Pulsed Drain Current Tc25c A

8.8

Tab

Tab

Standard Package Name

SOT

Maximum Operating Temperature C

150

Typical Gate Plateau Voltage V

6

Automotive

No

Typical Gate Charge Vgs Nc

8.7(Max)@10V

Typical Output Capacitance Pf

94

Maximum Gate Source Voltage V

±20

Typical Reverse Transfer Capacitance Vds Pf

18@25V

Typical Gate To Source Charge Nc

2.2(Max)

Parça Durumu

Active

Eccn Us

EAR99

Eu Rohs

Compliant

Maximum Power Dissipation On Pcb Tc25c W

2

Maximum Gate Threshold Voltage V

4

Maximum Positive Gate Source Voltage V

20

Minimum Gate Threshold Voltage V

2

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

8.7(Max)

Ppap

No

Typical Turnon Delay Time Ns

10

Typical Turnoff Delay Time Ns

15

Typical Input Capacitance Vds Pf

200@25V

Maximum Power Dissipation Mw

2000