SI7530DP-T1-GE3

Specifications

Rds On Max

75 mΩ

Drain To Source Voltage Vdss

60 V

Drain To Source Resistance

64 mΩ

Min. Çalışma Sıcaklığı

-55 °C

Montaj

Surface Mount

Maks. Çalışma Sıcaklığı

150 °C

Turn Off Delay Time

65 ns

Max Power Dissipation

1.5 W

Power Dissipation

3.5 W

Radyasyon Dayanımı

No

Pin Sayısı

8

Gate To Source Voltage Vgs

20 V

Drain To Source Breakdown Voltage

60 V

Continuous Drain Current Id

3.2 A

Rise Time

9 ns

Element Configuration

Dual

RoHS

Compliant

Fall Time

30 ns

Number Of Elements

2