SI6875DQ-T1-E3

Specifications

Gate To Source Voltage Vgs

8 V

Fall Time

27 ns

Drain To Source Breakdown Voltage

20 V

RoHS

Compliant

Casepackage

TSSOP

Rise Time

27 ns

Drain To Source Resistance

27 mΩ

Element Configuration

Dual

Power Dissipation

1.19 W

Maks. Çalışma Sıcaklığı

150 °C

Min. Çalışma Sıcaklığı

-55 °C

Turn Off Delay Time

170 ns