SI4621DY-T1-GE3

Specifications

Maximum Gate Source Voltage V

±20

Standard Package Name

SOP

Package Height

1.55(Max)

Maximum Continuous Drain Current A

5

Maximum Power Dissipation Mw

2000

Maximum Operating Temperature C

150

Eu Rohs

Compliant

Pin Sayısı

8

Maximum Idss Ua

1

Lead Shape

Gull-wing

Typical Turnoff Delay Time Ns

22

Number Of Elements Per Chip

1

Pcb Changed

8

Channel Type

P

Typical Gate Charge Vgs Nc

4.5@4.5V|8.7@10V

Typical Turnon Delay Time Ns

15

Maximum Gate Threshold Voltage V

3

Package Length

5(Max)

Supplier Package

SOIC N

Package Width

4(Max)

Typical Input Capacitance Vds Pf

450@10V

Ppap

No

Parça Durumu

Obsolete

Maximum Gate Source Leakage Current Na

100

Automotive

No

Typical Gate Charge10v Nc

8.7

Configuration

Single Dual Drain

Eccn Us

EAR99

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Typical Fall Time Ns

15

Maximum Drain Source Resistance Mohm

54@10V

Mounting

Surface Mount

Typical Rise Time Ns

60

Maximum Drain Source Voltage V

20

Category

Power MOSFET