SI4599DY

Specifications

Parça Durumu

Obsolete

Maximum Gate Source Voltage V

±20

Mounting

Surface Mount

Automotive

No

Typical Gate Charge Vgs Nc

11.7@10V|5.3@4.5V@N Channel|25@10V|11.8@4.5V@P Channel

Pin Sayısı

8

Maximum Operating Temperature C

150

Supplier Package

SOIC N

Package Height

1.55(Max)

Standard Package Name

SOP

Maximum Drain Source Resistance Mohm

35.5@10V@N Channel|45@10V@P Channel

Package Length

5(Max)

Process Technology

TrenchFET

Category

Power MOSFET

Lead Shape

Gull-wing

Typical Fall Time Ns

9|10@N Channel|13@P Channel

Package Width

4(Max)

Pcb Changed

8

Configuration

Dual Dual Drain

Maximum Power Dissipation Mw

2000

Typical Input Capacitance Vds Pf

640@20V@N Channel|970@20V@P Channel

Maximum Continuous Drain Current A

6.8@N Channel|5.8@P Channel

Maximum Drain Source Voltage V

40

Typical Turnoff Delay Time Ns

15|16@N Channel|30|28@P Channel

Number Of Elements Per Chip

2

Ppap

No

Typical Turnon Delay Time Ns

7|16@N Channel|44@P Channel

Typical Rise Time Ns

10|17@N Channel|12|33@P Channel

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

11.7@N Channel|25@P Channel

Channel Mode

Enhancement

Channel Type

N|P

Eccn Us

EAR99

Eu Rohs

Not Compliant