SI4493DY-T1-GE3

Specifications

Casepackage

SOIC

Drain To Source Voltage Vdss

20 V

RoHS

Compliant

Turn Off Delay Time

220 ns

Drain To Source Resistance

7.75 mΩ

Max Power Dissipation

1.5 W

Fall Time

140 ns

Turn On Delay Time

110 ns

Element Configuration

Single

Montaj

Surface Mount

Kurşunsuz

Lead Free

Continuous Drain Current Id

10 A

Min. Çalışma Sıcaklığı

-55 °C

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150 °C

Rds On Max

7.75 mΩ

Direnç

7.75 mΩ

Drain To Source Breakdown Voltage

-20 V

Gate To Source Voltage Vgs

12 V