SI2399DS-T1-GE3

Specifications

Gate To Source Voltage Vgs

12 V

Number Of Elements

1

Reach Svhc

No SVHC

RoHS

Compliant

Casepackage

SOT-23-3

Schedule B

8541290080

Number Of Channels

1

Max Junction Temperature Tj

150 °C

Maks. Çalışma Sıcaklığı

150 °C

Drain To Source Resistance

37 mΩ

Power Dissipation

2.5 W

Rise Time

20 ns

Montaj

Surface Mount

Drain To Source Voltage Vdss

-20 V

Nominal Vgs

-600 mV

Radyasyon Dayanımı

No

Pin Sayısı

3

Rds On Max

34 mΩ

Max Power Dissipation

2.5 W

Turn Off Delay Time

28 ns

Fall Time

9 ns

Input Capacitance

835 pF

Yükseklik

1.12 mm

Continuous Drain Current Id

-6 A

Turn On Delay Time

22 ns

Threshold Voltage

-600 mV

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

-20 V

Min. Çalışma Sıcaklığı

-55 °C