SI2347DS-T1-GE3

Specifications

Radyasyon Dayanımı

No

Montaj

Surface Mount

Drain To Source Voltage Vdss

-30 V

Rise Time

6 ns

Power Dissipation

1.7 W

Number Of Channels

1

Schedule B

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Maks. Çalışma Sıcaklığı

150 °C

Max Junction Temperature Tj

150 °C

Reach Svhc

No SVHC

Casepackage

SOT-23

RoHS

Compliant

Number Of Elements

1

Gate To Source Voltage Vgs

20 V

Continuous Drain Current Id

5 A

Drain To Source Breakdown Voltage

-30 V

Kurşunsuz

Lead Free

Threshold Voltage

-2.5 V

Min. Çalışma Sıcaklığı

-55 °C

Yükseklik

1.12 mm

Element Configuration

Single

Input Capacitance

705 pF

Fall Time

9 ns

Contact Plating

Tin

Turn Off Delay Time

19 ns

Max Power Dissipation

1.7 W

Rds On Max

42 mΩ

Pin Sayısı

3