SI2323DDS-T1-GE3

Specifications

Max Junction Temperature Tj

150 °C

Maks. Çalışma Sıcaklığı

150 °C

Number Of Channels

1

Schedule B

8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080

Rise Time

22 ns

Power Dissipation

960 mW

Drain To Source Resistance

32 mΩ

Drain To Source Voltage Vdss

-20 V

Montaj

Surface Mount

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

8 V

Ambalaj

Cut Tape (CT)

Casepackage

SOT-23-3

RoHS

Compliant

Reach Svhc

No SVHC

Input Capacitance

1.16 nF

Element Configuration

Single

Yükseklik

1.12 mm

Drain To Source Breakdown Voltage

-20 V

Kurşunsuz

Lead Free

Threshold Voltage

-1 V

Min. Çalışma Sıcaklığı

-55 °C

Turn On Delay Time

8 ns

Continuous Drain Current Id

-4.1 A

Pin Sayısı

3

Turn Off Delay Time

58 ns

Max Power Dissipation

1.7 W

Rds On Max

39 mΩ

Fall Time

11 ns

Contact Plating

Tin