IRFB4615PBF

Specifications

Gate Charge Qg Max Vgs

26nC @ 10V

Turn Off Delay Time

25 ns

Channel Type

N

Standard Package Name

TO-220

Maximum Gate Source Voltage V

±20

Direnç

39MOhm

Drain To Source Breakdown Voltage

150V

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Pcb Changed

3

Vgsth Max Id

5V @ 100μA

Typical Gate Charge10v Nc

26

Number Of Elements

1

Ambalaj

Tube

Maximum Continuous Drain Current A

35

Maximum Drain Source Voltage V

150

Pin Sayısı

3

Maximum Operating Temperature C

175

Channel Mode

Enhancement

Current Continuous Drain Id25

35A Tc

Rds On Max Id Vgs

39m Ω @ 21A, 10V

Transistor Application

SWITCHING

Terminal

Through Hole

Radyasyon Dayanımı

No

Tab

Tab

Process Technology

HEXFET

Genişlik

4.826mm

Kurşunsuz

Lead Free

Typical Rise Time Ns

35

ECCN Kodu

EAR99

Maximum Power Dissipation Mw

144000

Jedec95 Code

TO-220AB

Category

Power MOSFET

Package Width

4.83(Max)

Configuration

Single

Maximum Gate Threshold Voltage V

5

Automotive

No

Typical Gate Charge Vgs Nc

26@10V

Fall Time Typ

20 ns

Fabrika Tedarik Süresi

12 Weeks