IRF9520NPBF

Specifications

Process Technology

HEXFET

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Tab

Tab

Contact Plating

Tin

Current Continuous Drain Id25

6.8A Tc

Rds On Max Id Vgs

480m Ω @ 4A, 10V

Transistor Application

SWITCHING

Channel Mode

Enhancement

Pin Sayısı

3

Maximum Operating Temperature C

175

Maximum Continuous Drain Current A

6.8

Maximum Drain Source Voltage V

100

Pulsed Drain Currentmax Idm

27A

Typical Gate Charge10v Nc

27(Max)

Number Of Elements

1

Ambalaj

Tube

Vgsth Max Id

4V @ 250μA

Pcb Changed

3

Seri

HEXFET®

Kılıf / Paket

TO-220-3

Direnç

480mOhm

Drain To Source Breakdown Voltage

-100V

Gate Charge Qg Max Vgs

27nC @ 10V

Standard Package Name

TO-220

Channel Type

P

Turn Off Delay Time

28 ns

Maximum Gate Source Voltage V

±20

Montaj Tipi

Through Hole

Fet Type

P-Channel

Min. Çalışma Sıcaklığı

-55°C

Max Power Dissipation

48W

Parça Durumu

Obsolete

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

31 ns

Automotive

No

Typical Gate Charge Vgs Nc

27(Max)@10V

Maximum Gate Threshold Voltage V

4

Category

Power MOSFET

Package Width

4.69(Max)