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Specifications
- Rds On Drainsource Resistance
- 20 mOhms
- Number Of Channels
- 2 Channel
- Ürün Tipi
- MOSFET
- Technology
- Si
- Rise Time
- 1.8 ns
- Typical Turnoff Delay Time
- 17.4 ns
- Part Aliases
- FDMS7620S_F106
- Birim Ağırlık
- 0.008818 oz
- Id Continuous Drain Current
- 12.4 A
- Transistor Polarity
- N-Channel
- Vgs Th Gatesource Threshold Voltage
- 2.2 V
- RoHS
- Details
- Fabrika Paket Adedi
- 3000
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 2.5 W
- Configuration
- Dual
- Seri
- FDMS7620S
- Ambalaj
- Reel
- Kılıf / Paket
- Power-56-8
- Forward Transconductance Min
- 53 S
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Uzunluk
- 6 mm
- Typical Turnon Delay Time
- 6.6 ns
- Montaj Stili
- SMD/SMT
- Maks. Çalışma Sıcaklığı
- + 150 C
- Vds Drainsource Breakdown Voltage
- 30 V
- Transistor Type
- 2 N-Channel
- Qg Gate Charge
- 15.6 nC
- Yükseklik
- 1.1 mm
- Genişlik
- 5 mm