QM3816N6

Specifications

Pulsed Drain Currentmax Idm

102 A

Avalanche Energy Rating Eas

59.5 mJ

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperaturemin

-55 °C

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

REACH Uyumluluk Kodu

unknown

Case Connection

SOURCE

Drain Currentmax Id

13 A

Package Description

SMALL OUTLINE, R-PDSO-N5

Drainsource On Resistancemax

0.0073 Ω

Part Life Cycle Code

Contact Manufacturer

Jesd30 Code

R-PDSO-N5

Ds Breakdown Voltagemin

30 V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Ihs Manufacturer

UPI SEMICONDUCTOR CORP

Transistor Element Material

SILICON

Polaritychannel Type

N-CHANNEL

Rohs Code

Yes

Number Of Terminals

5