UT3N01ZG-AE2-R

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Part Life Cycle Code

Active

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Feedback Capmax Crss

5.4 pF

Power Dissipationmax Abs

0.33 W

Package Shape

RECTANGULAR

Operating Temperaturemax

85 °C

Rohs Code

Yes

Jesd30 Code

R-PDSO-G3

Transistor Element Material

SILICON

Operating Temperaturemin

-40 °C

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Drain Currentmax Id

0.15 A

Package Body Material

PLASTIC/EPOXY

Package Description

HALOGEN FREE PACKAGE-3

Package Style

SMALL OUTLINE

Polaritychannel Type

N-CHANNEL

REACH Uyumluluk Kodu

compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Ihs Manufacturer

UNISONIC TECHNOLOGIES CO LTD

Power Dissipation Ambientmax

0.33 W

Drainsource On Resistancemax

2 Ω

Number Of Elements

1

Jedec95 Code

TO-236

Ds Breakdown Voltagemin

30 V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Number Of Terminals

3