UF5305L-TN3-R

Specifications

Drain Currentmax Id

31 A

Transistor Element Material

SILICON

Operating Temperaturemax

150 °C

Ihs Manufacturer

UNISONIC TECHNOLOGIES CO LTD

Polaritychannel Type

P-CHANNEL

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Avalanche Energy Rating Eas

180 mJ

Drainsource On Resistancemax

0.06 Ω

Jedec95 Code

TO-252

Jesd30 Code

R-PSSO-G2

Pulsed Drain Currentmax Idm

110 A

Package Body Material

PLASTIC/EPOXY

ECCN Kodu

EAR99

Number Of Elements

1

Feedback Capmax Crss

90 pF

REACH Uyumluluk Kodu

compliant

Ds Breakdown Voltagemin

55 V

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Active

Number Of Terminals

2

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Power Dissipationmax Abs

42 W

Operating Temperaturemin

-55 °C

Terminal Formu

THROUGH-HOLE