2N80L-TF1-T

Specifications

Drainsource On Resistancemax

6.3 Ω

Avalanche Energy Rating Eas

180 mJ

Feedback Capmax Crss

9 pF

Yüzey Montaj

NO

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

UNISONIC TECHNOLOGIES CO LTD

Case Connection

ISOLATED

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Drain Currentmax Id

2.4 A

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Package Description

TO-220F1, 3 PIN

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Number Of Terminals

3

Power Dissipationmax Abs

24 W

Package Body Material

PLASTIC/EPOXY

Terminal Formu

THROUGH-HOLE

Package Style

FLANGE MOUNT

Jedec95 Code

TO-220AB

Ds Breakdown Voltagemin

800 V

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Active

Date Of Intro

2016-03-18

Pulsed Drain Currentmax Idm

9.6 A

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL