D5030UK

Specifications

Process Technology

DMOS

Maximum Gate Source Leakage Current Na

1000

Package Height

5.08

Package Width

10.16

Mounting

Screw

Package Length

34.03

Eccn Us

EAR99

Maximum Gate Source Voltage V

±20

Pin Sayısı

5

Number Of Elements Per Chip

2

Typical Drain Efficiency

50(Min)

Typical Power Gain Db

16(Min)

Minimum Frequency Mhz

1

Typical Reverse Transfer Capacitance Vds Pf

12(Max)@50V

Supplier Package

Case DR

Material

Si

Maximum Frequency Mhz

250

Typical Forward Transconductance S

6.4(Min)

Maximum Drain Source Voltage V

125

Hts

8541.29.00.95

Maximum Vswr

20

Parça Durumu

Active

Maximum Idss Ua

8000

Minimum Operating Temperature C

-65

Pcb Changed

5

Maximum Continuous Drain Current A

24

Configuration

Dual Common Source

Military

No

RoHS Durumu

RoHS Compliant

Typical Output Capacitance Vds Pf

200(Max)@50V

Typical Input Capacitance Vds Pf

480(Max)@50V

Maximum Operating Temperature C

200

Maximum Power Dissipation Mw

583000

Maximum Gate Threshold Voltage V

7