D2214UK

Specifications

Standard Package Name

Module

Channel Mode

Enhancement

Maximum Power Dissipation Mw

42000

Military

No

Material

Si

Gain

10 dB

Typical Drain Efficiency

40(Min)

RoHS Durumu

RoHS Compliant

Eccn Us

EAR99

Aec Qualified

No

Typical Output Capacitance Vds Pf

40(Max)@12.5V

Package Length

6.35

Maximum Operating Temperature C

200

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

1000

Channel Type

N

Hts

8541.29.00.95

Maximum Vswr

20

Pcb Changed

3

Maximum Gate Source Voltage V

±20

Typical Forward Transconductance S

0.72(Min)

Maximum Frequency Mhz

1000

Maximum Continuous Drain Current A

8

Operating Frequency

1 GHz

Technology

Si

Id Continuous Drain Current

8 A

Package Height

3.56

Transistor Polarity

N-Channel

Mounting

Surface Mount

Supplier Package

Case DP

Pin Sayısı

3

Maximum Gate Threshold Voltage V

7

Process Technology

DMOS

Kılıf / Paket

Flangeless DP

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Frequency Mhz

0

Maximum Drain Source Voltage V

40

Minimum Operating Temperature C

-65

Package Width

6.35

Vds Drainsource Breakdown Voltage

40 V