D2213UK

Specifications

Military

No

Material

Si

Typical Drain Efficiency

40(Min)

Gain

10 dB

Channel Mode

Enhancement

Maximum Power Dissipation Mw

83000

Channel Type

N

Hts

8541.29.00.95

Maximum Vswr

20(Min)

Pcb Changed

5

Maximum Gate Source Voltage V

±20

Output Power W

20

RoHS Durumu

RoHS Compliant

Eccn Us

EAR99

Package Length

24.76

Typical Output Capacitance Vds Pf

40(Max)@12.5V

Maximum Operating Temperature C

200

Parça Durumu

Active

Pin Sayısı

5

Process Technology

DMOS

Maximum Continuous Drain Current A

8

Maximum Frequency Mhz

2000

Typical Forward Transconductance S

0.72(Min)

Operating Frequency

1 GHz

Technology

Si

Package Height

4.82

Id Continuous Drain Current

8 A

Mounting

Screw

Transistor Polarity

N-Channel

Supplier Package

Case DK

Typical Power Gain Db

10(Min)

Vds Drainsource Breakdown Voltage

40 V

Package Width

6.47

Typical Input Capacitance Vds Pf

48(Max)@0V

Number Of Elements Per Chip

2

Typical Reverse Transfer Capacitance Vds Pf

4(Max)@12.5V

Output Power

20 W

Montaj Stili

SMD/SMT

Configuration

Dual Common Source

Kılıf / Paket

DK